Infineon Successfully Manufactures Functional 300mm Silicon Carbide Power Devices
英飞凌凭借300毫米碳化硅功率晶圆创下创新里程碑
Infineon announced that it has successfully processed 300mm silicon carbide (SiC) wafers into functional power devices using existing silicon manufacturing lines at its Villach fab in Austria, becoming a semiconductor manufacturer to achieve this process in a full-scale fab. Compared to 200mm wafers, 300mm wafers yield 2.3 times as many chips per wafer, primarily targeting solid-state transformers and power supply units across automotive, renewable energy, and AI data center applications.
The report demonstrates the manufacturing feasibility of 300mm SiC power devices on existing production lines, offering key benchmarks for evaluating the cost and supply resilience of future AI data center power equipment.
Source:Buzzing HN · 中文精选 · infineon.com